^zml-gonauctoi ij^toauati, line.. 20 stern ave. springfield, new jersey 07081 u.s.a. n channel enhancement mode buz 50 b telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pin1 pin 2 d pin 3 type buz 50 b vbs 1000v id 2a ^ds(on) 8q package to-220 ab maximum ratings parameter drain source voltage drain-gate voltage f?gs = 20 kq continuous drain current tc = 25 c pulsed drain current rc = 25 c gate source voltage power dissipation tc = 25 c operating temperature storage temperature thermal resistance, chip case thermal resistance, chip to ambient din humidity category, din 40 040 iec climatic category, din iec 68-1 symbol vds dgr id /dpuls vgs plot t. } tofn kthjc ^thja values 1000 1000 2 8 20 78 -55 + 150 -55 ... . + 150 <1.6 75 c 55/150/56 unit v a v w c k/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics, at 71 = 25c, unless otherwise specified buz 50 b parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vgs = 0 v, id = 0.25 ma, 7] = 25 c gate threshold voltage \/gs=vbs, /d = 1 ma zero gate voltage drain current vds = 1000 v, vgs = 0 v, 7] = 25 c vds = 1000 v, vgs = 0 v, 7] = 125 c gate-source leakage current vgs = 20 v, vds = 0 v drain-source on-resistance vgs=10v, /d = 1.5a ^(brpss ^gs(th) idss /gss ^ds(on) 1000 2.1 - - - - - 3 20 100 10 6.5 - 4 250 1000 100 8 v ma na q
buz 50 b electrical characteristics, at 71 = 25c, unless otherwise specified parameter symbol values min. typ. max. unit dynamic characteristics transconductance vqs- 2 * id * ^ds(on)max, /d = 1 -5 a input capacitance vgs = 0 v, vbs = 25 v, f= 1 mhz output capacitance vgs = 0 v, vds = 25 v, f= 1 mhz reverse transfer capacitance vgs = 0 v, vds = 25 v, f= 1 mhz turn-on delay time vdd = 30 v, vgs = 10 v, /d = 2 a rise time vdd = 30v, vgs = 10v, /d = 2a rgs = 50 q turn-off delay time vdd = 30 v, vgs = 10 v, /d = 2 a rgs = 50 q fall time vdd = 30v, vgs = 10v, /d = 2a rgs = 50 q 9fs qss coss qss buz 50 b electrical characteristics, at 7j = 25c, unless otherwise specified parameter symbol values min. typ. max. unit reverse diode inverse diode continuous forward current tc = 25 c inverse diode direct current.pulsed tc = 25 c inverse diode forward voltage vgs = 0 v, if = 6 a reverse recovery time i/r = 100 v, /f=/si d/f/df = 100 a/us reverse recovery charge vr = 100 v, /f=/s, d/f/df = 100 a/us is !sm vsd *rr qrr - - - - - - - 1.05 2 15 2 8 1.3 - - a v us uc
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